Optimized High-Voltage Analog Switch and Its Control Circuit Based on Silicon-on-Insulator Technology

In recent years, high-voltage analog switches have been widely used in various fields. To handle complex use scenarios, high-voltage analog switches need to achieve the goals of low on-resistance, high isolation performance, high response speed, and high voltage withstand range. Traditional high-voltage analog switches have issues such as low integration, large area, and slow response speed. This paper uses a super junction MOSFET (SJ-MOS) with a 0.18 μm SOI process and a solid-state relay (SSR) structure to implement a high-voltage analog switch. A gate drive circuit suitable for low gate-source breakdown voltage is proposed to maintain the gate-source voltage, achieving a low on-resistance of 24 Ω and high isolation. Compared with traditional high-voltage analog switches, it achieves higher performance with a smaller area.