Electrical Characterization and Microstructures of Ce-Doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films

Ce-doped bismuth titanate (Bi 4-x Ce x Ti 3 O 12 : BCT) and pure Bi 4 Ti 3 O 12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Ce doping into BIT result in a remarkable improvement in ferroelectric propertis. The Pr and the Ec values of the BCT film with x=0.75 were 23 μC/cm2 and 80 kV/cm, respectively.