期刊:Applied Physics Letters [American Institute of Physics] 日期:1976-01-01卷期号:28 (1): 34-36被引量:10
标识
DOI:10.1063/1.88556
摘要
The model of the Schottky barrier is based on the presence of ionized donors within the barrier. The empty energy levels corresponding to these donors lie in the barrier. Thus, there can be resonant tunneling through these empty energy levels. This is an inherent effect associated with Schottky barriers. We show how resonant tunneling depends on the ionization energy of the donors and the conditions under which resonant tunneling prevails over common tunneling.