润湿
各向异性
范德瓦尔斯力
六方氮化硼
力场(虚构)
化学物理
接触角
材料科学
分子动力学
氮化硼
表面能
吸附
表面光洁度
表面粗糙度
纳米技术
水模型
分子
化学
计算化学
物理化学
复合材料
光学
物理
石墨烯
有机化学
量子力学
作者
Zhicheng Feng,Zhangke Lei,Yuanpeng Yao,Jianxin Liu,Bozhao Wu,Wengen Ouyang
出处
期刊:Langmuir
[American Chemical Society]
日期:2023-12-08
卷期号:39 (50): 18198-18207
被引量:19
标识
DOI:10.1021/acs.langmuir.3c01612
摘要
This study introduces an anisotropic interfacial potential that provides an accurate description of the van der Waals (vdW) interactions between water and hexagonal boron nitride (h-BN) at their interface. Benchmarked against the strongly constrained and appropriately normed functional, the developed force field demonstrates remarkable consistency with reference data sets, including binding energy curves and sliding potential energy surfaces for various configurations involving a water molecule adsorbed atop the h-BN surface. These findings highlight the significant improvement achieved by the developed force field in empirically describing the anisotropic vdW interactions of the water/h-BN heterointerfaces. Utilizing this anisotropic force field, molecular dynamics simulations demonstrate that atomically flat, pristine h-BN exhibits inherent hydrophobicity. However, when atomic-step surface roughness is introduced, the wettability of h-BN undergoes a significant change, leading to a hydrophilic nature. The calculated water contact angle (WCA) for the roughened h-BN surface is approximately 64°, which closely aligns with experimental WCA values ranging from 52° to 67°. These findings indicate the high probability of the presence of atomic steps on the surfaces of the experimental h-BN samples, emphasizing the need for further experimental verification. The development of the anisotropic interfacial force field for accurately describing interactions at the water/h-BN heterointerfaces is a significant advancement in accurately simulating the wettability of two-dimensional (2D) materials, offering a reliable tool for studying the dynamic and transport properties of water at these interfaces, with implications for materials science and nanotechnology.
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