A Segmented Plasma Etching Method for 2.5D/3D Through Silicon Vias

Advanced packaging is the growth engine of the semiconductor industry, and 2.5D/3D packaging is arising to maintain the Moore's Law. Through silicon vias (TSVs) are commonly used structures in 2.5D/3D packaging, which are fabricated by plasma etching. In this work, we demonstrated a segmented plasma etching method, and the issues in 2.5D/3D TSVs (such as, sidewall roughness and notch) were addressed by using this modified Bosch process. Thus, this method is of significance to improve the etch profiles in discrete devices, microelectromechanical systems (MEMS) and advanced packaging.