光伏系统
碲化镉光电
群(周期表)
兴奋剂
材料科学
计算机科学
光电子学
物理
工程类
电气工程
量子力学
作者
Akira Nagaoka,Santosh K. Swain,Amit Munshi
标识
DOI:10.1109/jphotov.2024.3374083
摘要
In recent years, one of the most important advancements in cadmium telluride photovoltaic research and technology has been the realization that group-V doping is a viable strategy to increase open-circuit voltage and long-term reliability. Considering the critical importance of this topic, this article reviews the fundamentals of group-V doping, including the properties of group-V doped single crystals produced by various methods, doping mechanisms and limits, doping of polycrystalline films, and device performance. Research, which attempts to relate group-V doping to device efficiency, is assessed and the gaps in the current information are highlighted. We also provide important issues with group-V doping and suggest possible mitigation strategies.
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