Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology

An amorphous indium tin oxide (ITO) film (Ar/O2 = 80:0.5) was heated to 400 °C and maintained for 1-9 min using rapid infrared annealing (RIA) technology and conventional furnace annealing (CFA) technology. The effect of holding time on the structure, optical and electrical properties, and crystallization kinetics of ITO films, and on the mechanical properties of the chemically strengthened glass substrates, were revealed. The results show that the nucleation rate of ITO films produced by RIA is higher and the grain size is smaller than for CFA. When the RIA holding time exceeds 5 min, the sheet resistance of the ITO film is basically stable (8.75 Ω/sq). The effect of holding time on the mechanical properties of chemically strengthened glass substrates annealed using RIA technology is less than that of CFA technology. The percentage of compressive-stress decline of the strengthened glass after annealing using RIA technology is only 12-15% of that using CFA technology. For improving the optical and electrical properties of the amorphous ITO thin films, and the mechanical properties of the chemically strengthened glass substrates, RIA technology is more efficient than CFA technology.