Spectral dependence of noise on gate bias in n-MOSFETS

The modified McWhorter model that has been developed before to explain the 1ƒγ noise in Metal-Oxide-Semiconductor-Field-Effect-Transistors was extended to include frequency dependence of the noise power spectrum on operating voltages. Under the assumption of energy and spatial distribution of traps in the oxide, the drain voltage noise spectrum was calculated for MOSFETs operating in the linear region. Experimentally flicker noise measured on n-channel enchancement-mode MOSFETs up to the frequency of 4 kHz. The actual value of the exponent γ in the 1ƒγ spectrum was found to increase with gate bias. Furthermore, it was found that the magnitude of the noise power decreased with gate bias. The detail of the calculations and the experimental results are presented.