Synergistic function of doping and ligand engineering to enhance the photostability and electroluminescence performance of CsPbBr 3 quantum dots

Abstract The photostability issue of CsPbX 3 (X = Cl, Br, I) quantum dots (QDs) is one of the key origins for the degradation of their luminescence performance, which hinders their application in lighting and displays. Herein, we report a new method combining doping and ligand engineering, which effectively improves the photostability of CsPbBr 3 QDs and the performance of QD light-emitting diodes (QLEDs). In this method, ZnBr 2 is doped into CsPbBr 3 QDs to reduce surface anion defects; didodecyldimethyl ammonium bromide (DDAB) and tetraoctylammonium bromide (TOAB) hybrid ligands, which have strong adsorption with QDs, are employed to protect the surface and enhance the conductivity of QD layer in QLEDs. The photoluminescence (PL) and transmission electron microscopy measurements prove the effectively improved photostability of CsPbX 3 QDs. Moreover, reduced defects and improved conductivity by doping and hybrid ligands treatment also enable the improved electroluminescence performance of CsPbX 3 QDs. The maximum luminance and external quantum efficiency of the QLED with optimized CsPbX 3 QDs are 3518.9 cd m −2 and 5.07%, which are 3.6 and 2.1 times than that of the control device, respectively. Combining doping and hybrid ligands makes perovskite QDs have an extremely promising prospect in future applications of high-definition displays, high-quality lighting, as well as solar cells.