Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model

A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power super-junction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.