材料科学
异质结
各向异性
光致发光
拉曼光谱
透射电子显微镜
开尔文探针力显微镜
光电子学
光谱学
密度泛函理论
凝聚态物理
显微镜
各向同性
薄膜
载流子
化学物理
扫描透射电子显微镜
椭圆偏振法
再结晶(地质)
宽禁带半导体
分子物理学
表征(材料科学)
纳米技术
对称性破坏
光学显微镜
力谱学
电荷密度
作者
Tao Xu,Guibo Zheng,Junjie Jiang,Wenzhe Zhou,Zhihui Chen,Han Huang,Fangping Ouyang
摘要
Interface symmetry breaking in heterojunctions can introduce enhanced performance in optoelectronic devices, tunnel transistors, and catalytic applications. Herein, we report a solution recrystallization method for fabricating high-quality two-dimensional PbI2 nanosheets on mechanically exfoliated thin CrOCl flakes. The high crystalline quality of the synthesized heterojunctions is confirmed by a suite of characterization techniques, including atomic force microscopy and high-resolution transmission electron microscopy. Density functional theory calculations reveal the formation of a type-II band alignment at the interface, accompanied by charge transfer from the upper PbI2 layer to the underlying CrOCl. Photoluminescence (PL) and Kelvin probe force microscopy measurements confirm the interfacial charge transfer. Especially, angle-resolved polarized Raman and PL spectroscopy reveal that CrOCl induces in-plane anisotropy (IPA) in PbI2 with anisotropy ratios of 1.64 (Raman) and 1.65 (PL), which is primarily attributed to the anisotropic interfacial charge interactions. Our findings provide a platform for expanding the application prospects of isotropic PbI2 in polarization-related fields through interface induced IPA.
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