4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly

We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of −9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.