Transport mechanism in sub 100°C processed high mobility polycrystalline ZnO transparent thin film transistors

We demonstrate high performance ZnO TFTs with record field effect mobility 229 cm2/V.s, on/off ratio exceeding 107(limited only by our simple device structure) and sub threshold swing (S)1,2The tail state distribution of the density of states (DOS) in ZnO extracted via 2D numerical simulations matched to experiment, demonstrates unequivocally a similar mobility mechanism that underpins all Transparent Conducting Oxides (TCOs)-whether amorphous or not. The characteristic Temperature of ZnO is found to be ~463 K and the tail state density of states (DOS) is ~1.3 ×1020cm-3eV-1.