香料
通带
高电子迁移率晶体管
噪音(视频)
前端和后端
电子工程
噪声温度
噪声系数
声学
电气工程
物理
计算机科学
工程类
带通滤波器
相位噪声
晶体管
放大器
CMOS芯片
电压
人工智能
图像(数学)
操作系统
作者
Yew Tai Chieng,R.A. Minasian
出处
期刊:Electronics Letters
[Institution of Engineering and Technology]
日期:1992-06-04
卷期号:28 (12): 1147-1149
被引量:1
摘要
Accurate modelling of HEMT noise mechanisms has been obtained using a new technique for implementing generalised noise sources in SPICE, including frequency and correlation effects. A pin-HEMT optical front end operating between 2.2 and 4.3GHz was designed, and the equivalent input noise spectral density was measured to be below 3.0pA/□(Hz) over the passband.
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