Abstract: Metal halide perovskites, as the promising candidates for next-generation optoelectronic materials, have made significant progress in light-emitting diodes, photovoltaics and photodetectors due to their excellent optoelectronic properties.In recent years, the application scope of perovskite materials has been gradually expanded, particularly in the field of spintronics, where the emergence of chiral perovskites has provided new possibilities for the injection of spin-polarized carriers.Chiral perovskite materials combine the excellent optoelectronic properties and chiral induced spin selection (CISS) effect, which enables the injection of spin-polarized carriers at room temperature for their applications in spin light-emitting diodes (spin-LEDs).Spin-LEDs not only can achieve efficient electroluminescence, but also can realize the transmission and storage of spin information through the spin polarization of carriers, offering a new research direction for future spintronic devices.This article reviews the origin of chirality in perovskites and its research progress in spin-LEDs.First it introduces the basic characteristics and development history of perovskite materials, then discusses in detail the changes in perovskite energy levels after introducing chiral molecules, the resulting CISS effect, the main characterization methods of the CISS effect, and its application in spin-LEDs.Finally, the challenges and future development prospects of chiral perovskites in the field of spintronics are explored.This review aims to provide comprehensive references for researchers in the relevant fields, and guide to promote further research and application of chiral perovskite materials in spintronics.Key words: chiral perovskites; spin light-emitting diodes; chiral induced spin selection effect 文章编号: 1000