电气工程
噪声系数
CMOS芯片
宽带
晶体管
变压器
电子工程
工程类
计算机科学
电信
放大器
电压
作者
Joon‐Hyung Kim,Jeong-Taek Son,Jeong‐Taek Lim,Han‐Woong Choi,Choul‐Young Kim
标识
DOI:10.1109/tmtt.2024.3354908
摘要
This article introduces a CMOS low noise amplifier (LNA) designed to operate within 32–46 GHz frequency range, aiming to achieve an ultralow noise figure (NF). Our primary goal is to get a broadband LNA with low NF, ensuring $>$ 10 dB return loss and consistent, flat gain. These objectives were realized through the application of a three-winding transformer and multi-array transistors (large transistor) strategy. The proposed LNA circuit is manufactured using a 65-nm bulk CMOS process and its feasibility is confirmed through precise measurements. The NF of the fabricated LNA achieves 2.2–3.2 dB within 32–46 GHz. To the best of our knowledge, the LNA achieves the lowest NF at the Q -band. The gain is 19.2–21.5 dB within 32–46 GHz. The third-order input intercept (IIP $_{3}$ ) point is $-$ 7.6 dBm at 38 GHz. The proposed LNA consumes 22 mW at 1 V supply voltage and has a compact core size of 0.16 mm $^{{2}}$ .
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