PMOS body-tied FinFET (Omega MOSFET) characteristics

In this paper, we introduce PMOS body-tied FinFet characteristics. For this work, the 0.1/spl mu/m design ruled SRAM technology was used. I/sub D/-V/sub DS/ characteristics show that /spl Omega/ MOSFET apparently has lower DIBL characteristics than conventional PMOS transistor. On current of the /spl Omega/ MOSFET is higher than that of conventional device and can be improved by optimising unit processes.