High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

In this study, silicon carbide ceramic (SiC) was processed by a high repetition frequency femtosecond laser with a wavelength of 1030 nm. We have analyzed the affection of different parameters to the material removal rate and researched surface oxidation phenomenon during laser scanning. The surface oxidation phenomenon is a major factor that affects the material removal rate of SiC ceramic and may even lead to failure of material removal. The oxidation phenomenon of the processing area is directly related to the laser induced temperature rise. Increasing laser scanning speed and increasing laser scanning interval are effective methods to reduce the oxidation phenomenon. The experiments have demonstrated that high-speed processing of SiC ceramic by high repetition frequency femtosecond laser is available under certain parameters.