Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Abstract Undoped and Neodymium‐doped gallium oxide (Ga 2 O 3 ) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10 –4 . These films were successfully doped with Neodymium by a co‐sputtering method. The photoluminescence experiments for the Nd‐doped β‐Ga 2 O 3 films clearly showed the rare‐earth emitting signature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)