Semiconductor power devices

In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed. Chapter Contents: 1.1 Introduction 1.2 High-voltage SiC power devices 1.2.1. Characterization of 15 kV SiC N-IGBTs 1.2.2. Characterization of 10 kV SiC MOSFETs 1.3 Low-voltage SiC devices and its characteristics 1.3.1. Low-voltage gate drive design 1.3.2. Common-mode current minimization 1.4 Characterization of 1,200 V, 100 A SiC MOSFET 1.4.1. 1,200 V, 100 A SiC MOSFET device characterization without complementary device of the half-bridge module 1.4.2. 1,200 V, 100 A SiC MOSFET device characterization with complementary device of the half-bridge module 1.4.3. Hard-switching characterization of 1,700 V SiC MOSFET [11] 1.4.3.1 SiC MOSFET switching 1.4.3.2 Si IGBT switching 1.4.3.3 BiMOSFET switching 1.4.4. Performance comparison of MOSFET and IGBT 1.4.4.1 Forward characterization 1.4.4.2 Operating boundary in output power-switching frequency plane 1.4.5. Gate drive design and characterization of 1,200 V/45 A infineon SiC JFET module [12] 1.4.6. SiC super-junction transistor characteristics 1.5 Zero voltage switching characterization of 12 kV SiC [14] 1.5.1. ZVS turn-on characteristics 1.5.2. ZVS turn-off characteristics 1.5.2.1. 12 kV, 2 μm buffer layer N-IGBT 1.5.2.2 12 kV, 5 μm buffer layer N-IGBT 1.6 All SiC-based SST 1.7 Summary Acknowledgements References Inspec keywords: power bipolar transistors; insulated gate bipolar transistors; wide band gap semiconductors; power MOSFET; silicon compounds; junction gate field effect transistors Other keywords: JFET; SiC; junction gate field-effect transistor; metal oxide semiconductor field effect transistor; high-voltage silicon carbide IGBT; semiconductor power device; insulated gate bipolar transistor; low-voltage silicon carbide MOSFET Subjects: Power semiconductor devices; Other field effect devices; Insulated gate field effect transistors; Bipolar transistors