Recent advances of 2D materials in semiconductor application: A review

半导体 纳米技术 材料科学 工程物理 工程伦理学 工程类 光电子学
作者
Md. Aminul Islam,Safiullah Khan,Juhi Jannat Mim,Shamimur Rahman,Md. Ahadul Islam Patwary,Md. Saiful Islam,Nayem Hossain
出处
期刊:Advanced sensor and energy materials [Elsevier BV]
卷期号:4 (4): 100161-100161 被引量:2
标识
DOI:10.1016/j.asems.2025.100161
摘要

Semiconductors have performed remarkably since the advent of two-dimensional (2D) materials with excellent electrical, optical, and thermal characteristics. This review summarizes the recent progress made in the 2D materials field, i.e., graphene, transition metal dichalcogenides (TMDCs), and black phosphorus, focusing on their distinct thickness-dependent band structures, charge carrier mobilities, and mechanical properties. This has become a short but powerful interface for mobile devices with fast variations in our speaking circuits, and the power reaches from transistors, photodetectors, and solar cells together with digital electronics, radio-frequency devices, optoelectronics, and sensing technologies. This paper seeks to provide a clear perspective on fabrication, stability, and scale-up challenges by discussing theoretical and experimental approaches and highlighting challenges and innovative methods, including ultrasound-assisted strategies and heterostructure engineering. The present article performed and analysed a systematic literature review on key publications on the fundamental mechanisms and emerging applications of 2D materials in semiconductor technology. The review highlights the role these materials play in improving device performance, energy efficiency, and environmental friendliness. The paper concludes with a perspective on future directions, highlighting new research opportunities through advanced doping techniques and defect engineering to address current limitations and propel the broader adoption of 2D materials. This work sets another milestone for next-generation semiconductors. Another unique aspect of the study is its ability to bridge the gap between the fundamental characteristics of 2D semiconductors and real device-level integration. It draws attention to scalability, stability, and complementary metal oxide semiconductors (CMOS) compatibility difficulties that were not adequately considered in previous studies. The study discusses sophisticated tactics, including interface optimization and heterostructure engineering. A comparative analysis of 2D materials and their possible real-world semiconductor applications is also included in this chapter.
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