Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters

Visible light emitting diodes (LEDs) using semipolar (11-22)-oriented InGaN/GaN quantum wells (QWs) were demonstrated. Three dimensional microfacet structures realized white/pastel emissions without phosphors, while planar structures led to LEDs with much less polarization-induced internal electric fields compared to the conventional LEDs on the (0001) plane, both of which cannot be realized without the (11-22) planes.