砷化镓
量子隧道
共振隧穿二极管
二极管
光电子学
表征(材料科学)
制作
材料科学
外延
纳米技术
工程物理
电气工程
工程类
物理
光学
量子阱
激光器
病理
医学
替代医学
图层(电子)
标识
DOI:10.1088/1674-4926/44/10/103101
摘要
Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.
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