Y‐Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Y‐stabilized ZrO 2 (YSZ) as a promising single‐crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable for both physical (PVD) and chemical vapor deposition (CVD) processes is used. MoS 2 layers grown on YSZ (111) exhibit sixfold symmetry and in‐plane epitaxial relationship with the wafer of () MoS 2 || () YSZ. The PVD‐grown submonolayer thin films show nucleation of MoS 2 islands with a lateral size of up to 100 nm and a preferential alignment along the substrate step edges. The layers exhibit a strong photoluminescence yield as expected for the 2H‐phase of MoS 2 in a single monolayer limit. The CVD‐grown samples are composed of triangular islands of several micrometers in size in the presence of antiparallel domains. The results represent a promising route toward fabrication of wafer‐scale single‐crystalline transition metal dichalcogenide layers with a tunable layer thickness on commercially available wafers.