RETRACTED: N 2 /H 2 Plasma-Enhanced Atomic Layer Deposition for SiO 2 Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing

High Resolution Image Download MS PowerPoint Slide The limitations of current gap-filling processes hinder advancements in 3D nano device structures. This work demonstrates the use of N 2 /H 2 plasma to enhance the gap-filling capabilities of plasma-enhanced atomic layer deposition (PEALD) for shallow trench isolation (STI) with a narrow spacing of 7 nm. Optimized sequential treatments were introduced to achieve void-free deposition. The Si precursor and O 2 plasma were used to grow SiO 2, while N 2 plasma, with a slight addition of H 2 gas, was employed in the treatment step to fill gaps between the 3D patterns. STEM imaging confirmed that the STI structure became void-free. Simulations of ion concentration profiles in the STI structure clarified the role of adding H 2 gas in the plasma treatment step. These findings highlight how adding a small amount of H 2 gas improves the N 2 plasma performance in supporting the continued development of void-free PEALD processes for increasingly thinner 3D nanoelectronic device patterns.