The study of novel high brightness 620 nm AlGaInP light emitting diodes

The problem of conventional light emitting diodes (LEDs) was analyzed. A novel tunnel-regenerated multiple-active-region light-emitting diode with high quantum efficiency and high brightness has been proposed and fabricated. We have proved theoretically that the efficiency of the electrical luminescence and the on-axis luminous intensity of such novel LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such novel LED with only 3 /spl mu/m GaP current spreading layer has exceeded 5cd at 20 mA DC operation under 15/spl deg/ package. The ultrahigh quantum efficiency and ultrahigh brightness LED under the low injection level was realized.