High-Photoresponsivity MoS<inf>2</inf>/CdSe Quantum Dots Hybrid Phototransistor with Enhanced Photoresponse Speed

MoS ₂ , a two-dimensional (2D) material, is of great importance for the next-generation electronic and optoelectronic devices, including transistor and photodetector, because of its excellent optical and electrical performance. However, the largest issue in the field of 2D material based photodetection is realizing the high responsivity and fast response speed at the same time. Here, we proposed a hybrid MoS ₂ /CdSe quantum dots phototransistor structure to improve the photoresponsivity as well as the response speed. Compared with the pristine Mos2device, the photoresponsivity is improved about 7.5 times, reaching 2.6×10 ³ A/W. Meanwhile, the response speed was 4.6 times faster, up to about 2.6 s. This kind of 2D-0D hybrid photodetector is promising for realizing novel high-performance photodetectors.