制作
折射率
材料科学
折射率对比度
波导管
光电子学
光学
化学气相沉积
光子学
椭圆偏振法
表征(材料科学)
实现(概率)
高折射率聚合物
折射率分布
薄膜
纳米技术
病理
替代医学
物理
统计
医学
数学
作者
Jozef Chovan,Daniel Figura,Juraj Chlpík,Dušan Lorenc,V. Řeháček,F. Uherek
出处
期刊:Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series
日期:2017-12-01
被引量:1
摘要
SiON is a suitable material for the implementation of photonic integrated circuits with a middle refractive index contrast for the visible and near infrared region. The paper presents the design, fabrication and characterization of SiON/SiO2/Si structures for passive optical waveguides realization with designed refractive index contrast 0.13. This refractive index contrast allows fabrication of strip SiOx/SiON/SiO2/Si waveguides with waveguide band losses bellow 0.01dB/cm at 150um waveguide radius. SiON and SiOx layers were fabricated by plasma-enhanced chemical vapor deposition techniques. The plasma-enhanced chemical vapor deposition technological parameters were tuned and optimized for designed refractive index contrast 0.13 and designed waveguide thickness 2.5 m. The refractive index of fabricated SiON layers were measured by optical ellipsometry.
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