四方晶系
凝聚态物理
材料科学
无扩散变换
金属丰度
费米能级
自旋电子学
晶格常数
自旋极化
马氏体
晶体结构
铁磁性
结晶学
化学
微观结构
物理
冶金
衍射
光学
天文
电子
星星
量子力学
作者
Yinsheng Huang,Chao Jing,Jianfu Li,Yuanlei Zhang,Zhe Li,Miaofu Ye,Xiaodong Sun
标识
DOI:10.1016/j.commatsci.2019.04.026
摘要
Herein, we have investigated, theoretically and experimentally, the influence of Sb-doping, at Ga-site, on crystal structure, martensitic transition (MT) and half-metallicity of Co2VGa1−xSbx (x = 0, 0.25 and 0.5) Heusler alloys. The results reveal that the Co-V-Ga-Sb alloys with x = 0 and 0.25 exhibit typical half-metallicity, and at x = 0.25 the density of states (DOS) show a wider band gap near the Fermi level in minority states, which implies that Co2VGa0.75Sb0.25 is an efficient material with 100% spin polarization. Moreover, Co2VGa0.5Sb0.5 exhibits a martensitic transformation from parent phase with L21-type cubic structure to the D022-type tetragonal structure at ∼347 K. In addition, the DOS of Co2VGa0.5Sb0.5 also exhibit half-metallicity after expanding the lattice parameter by 2%. The unique features of Co2VGa1−xSbx Heusler alloys imply that these alloys are promising for high-efficiency spintronics and shape memory devices.
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