过热(电)
限流
MOSFET
电气工程
电子工程
计算机科学
工程类
控制理论(社会学)
电压
晶体管
控制(管理)
人工智能
作者
Yufang Lu,Jiecheng Ai,Luyang Wei,Kai Meng,Chengfu Han
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2023-01-01
卷期号:11: 104955-104965
被引量:2
标识
DOI:10.1109/access.2023.3311259
摘要
This paper combines real-time temperature detection of MOSFETs inside solid-state switches with a temperature field model, and proposes a current limiting protection control strategy based on real-time heat management of MOSFETs. This strategy can avoid the unreasonable setting of current limiting protection time in solid-state switches during short circuit faults, leading to overheating and failure of MOSFET, and thus causing faults in HVDC power distribution system. Firstly, we analyzed the protection characteristics and shortcomings of solid-state switches such as solid-state power controller(SSPC) and solid-state circuit breakers (SSCB). Secondly, we optimized the circuit design of the solid-state power controller and the conversion relationship under different operating conditions, and elaborate on the implementation method of this control strategy in detail. Thirdly, we established a heat dissipation model for the MOSFET of SSPC, conduct theoretical and simulation analysis, and obtain the temperature field distribution of the MOSFET; Finally, the temperature of the MOSFET core is calculated by collecting the temperature of the position through the solid-state power controller temperature sensor, achieving accurate measurement. This paper also developed a prototype of a solid-state power controller with a rated current of 20A at 270V DC, and conducted short-circuit current limiting protection tests at 5 times the rated current; Experiments have shown that this control strategy can effectively prevent the overheating failure of the MOSFET.
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