ReS₂-MoSSe Heterostructure-Based High- Performance Broadband Visible Photodetector

In this article, we report the development of a wideband visible photodetector (PD) based on a heterostructure composed of ReS2 and MoSSe, constructed on a p-type silicon substrate. The architecture of the device consists of Al and Ag serving as the two electrodes for the PD. The fabricated PD exhibited remarkable photodetection capabilities spanning from 400 to 750 nm, with its peak responsivity reaching 4.42 A/W at 410 nm. The PD achieved a highest measured specific detectivity of $8.51\times10\,\,^{\mathrm{ 10}}$ Jones and an external quantum efficiency (EQE) of 13.37%. In terms of transient performance, the PD demonstrated a rise time of 0.3 s and a fall time of 0.22 s. We also integrated this fabricated PD into a 30 cm long on–off keying (OOK) modulated visible lightwave communication (VLC) system, successfully detecting a PN9 PRBS sequence during testing.