High-performance all-inorganic CsPbBr3 quantum dots with a low-threshold amplified spontaneous emission

All-inorganic halide perovskite CsPbX 3 (X = Br/Cl/I)quantum dots have gained a considerable attention in the optoelectronic fields. However, the high cost and poor stability of the prepared CsPbX 3 quantum dots (QDs) are inevitable challenges for their future practical applications. And the high-performance CsPbX 3 QDs are always needed. Herein, a facile and low-cost synthesis scheme was adopted to prepare the CsPbBr 3 QDs modified by lead bromide (PbBr 2 ) and tetraoctylammonium bromide (TOAB) ligands at room temperature in open air. The prepared CsPbBr 3 QDs exhibited a high photoluminescence quantum yield (PLQY) of 96.6% and a low amplified spontaneous emission (ASE) threshold of 12.6 µJ/cm 2 . Stable ASE intensity with little degradation was also realized from the CsPbBr 3 QDs doped with PMMA. Furthermore, the enhanced ASE properties of the CsPbBr 3 QDs-doped PMMA based on distributed feedback (DFB) substrate was achieved with a lower threshold of 3.6 µJ/cm 2 , which is 28.6% of that of the (PbBr 2 + TOAB)-treated CsPbBr 3 QDs without PMMA. This work exhibits a promising potential in the on-chip light source.