Effect of SiC nanowires on the high-temperature microwave absorption properties of SiCf/SiC composites

SiC-nanowire-reinforced SiCf/SiC composites were successfully fabricated through an in situ growth of SiC nanowires on SiC fibres via chemical vapour infiltration. The dielectric and microwave absorption properties of the composites were investigated within the frequency range of 8.2–12.4 GHz at 25–600 °C. The electric conductivity and complex permittivity of the composites displayed evident temperature-dependent behaviour and were enhanced with increasing temperature. The composites exhibited superior microwave absorption abilities with a minimum reflection loss value of −47.5 dB at 11.4 GHz and an effective bandwidth of 2.8 GHz at 600 °C. Apart from the contribution of the interconnected SiC nanowire network and multiple reflections, the excellent microwave absorption performance was attributed to dielectric loss that originated from SiC nanowires with abundant stacking faults and heterostructure interfaces. Results suggested that the composites are promising candidates for high-temperature microwave absorbing materials.