Fabrication of high-power 2μm GaSb-based laser

High-power InGaSb/AlGaAsSb quantum well separate confinement structure lasers are fabricated. Threshold currents of the sample lasers range from 150mA to 270mA, turn-on voltages range from 0.51V to 0.59V. Stable high power and high efficiency operation is achieved, output powers at 3A range from 978mW to 1050mW, the power conversion efficiencies at 3A range from 21.3% to 22.9%, slop efficiencies range from 0.35W/A to 0.38W/A. The capability of fabricating reliable high-power 2μm GaSb-based laser is confirmed. The current of one sample was ramped up to 6A, the emitter exhibits a high performance with peak output power of 1320mW at 5.4A，maximum power conversion efficiency of 27.5% and slop efficiency of 0.34W/A.