光电探测器
灵敏度(控制系统)
光电二极管
材料科学
光电子学
光电流
晶体管
计算机科学
噪音(视频)
信号(编程语言)
暗电流
图像传感器
探测器
二硫化钼
调制(音乐)
偏压
异质结
和大门
电压
光通信
逻辑门
机器视觉
响应时间
感光度
电介质
电子工程
纳米线
探测理论
或门
夜视
作者
Ruyue Han,Dayu Jia,Bo Li,Shun Feng,G. B. Zhang,Yi Sun,Zheng Han,Chi Liu,Hui-Ming Cheng,Dong-Ming Sun
标识
DOI:10.1038/s41377-025-02051-1
摘要
Abstract Accurate recognition of low-contrast targets in complex visual environments is essential for advanced intelligent machine vision systems. Conventional photodetectors often suffer from a weak photoresponse and a linear dependence of photocurrent on light intensity, which restricts their ability to capture low-contrast features and makes them susceptible to noise. Inspired by the adaptive mechanisms of the human visual system, we present a molybdenum disulfide (MoS 2 ) phototransistor with tunable sensitivity, in which the gate stack incorporates a heterostructure diode—composed of O-plasma-treated MoS 2 and pristine MoS 2 —that serves as the photosensitive layer. This configuration enables light-intensity-dependent modulation of the diode’s conductance, which dynamically in turn alters the voltage distribution across the gate dielectric and transistor channel, leading to a significant photoresponse. By modulating the gate voltage, the light response range can be finely tuned, maintaining high sensitivity to low-contrast targets while suppressing noise interference. Compared to conventional photodetectors, the proposed device achieves a 1000-fold improvement in sensitivity for low-contrast signal detection and exhibits significantly enhanced noise immunity. The intelligent machine vision system built on this device demonstrates exceptional performance in detecting low-contrast targets, underscoring its promise for next-generation machine vision applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI