Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices

The application of two-photon absorption (TPA) for local nonequilibrium charge generation in the semiconductor microelectronic structures improves the 3D-spatial resolution of optical testing techniques (such as OBIC and similar), as compared to those, based on single-photon absorption (SPA). In this paper we discuss the results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the TPA of tightly focused femtosecond laser radiation. The experiments were performed at the setup, which includes the tunable optical parametric amplifier with output wavelength in 900…1200 nm region. The results were compared to those obtained by SPA technique on the same experimental setup.