A Ti‐Doped Chemical Vapor Deposition Diamond Device as Artificial Synapse for Neuromorphic Applications

Abstract The great demand of multifunctional portable electronic products in daily life and the need of a large integration of memories with logic devices and sensors, have increased the interest in the identification of suitable materials for neuromorphic computing applications. Major innovations in this direction have been achieved by exploring materials belonging to different fields of applications and taking advantage of already consolidated deposition methods. Despite the great interest in the field and the large use in complementary applications such as sensing electrodes, neural and cellular interfaces, the use of diamond‐like materials in neuromorphic applications is still limited to a few examples. Herein, the development of a synaptic element based on high‐quality polycrystalline diamond layers containing Ti inclusions showing a marked and reproducible resistance switching behavior is reported. Realized by means of a hybrid chemical vapor deposition‐powder flowing technique, this titanium doped diamond shows a 3D polycrystalline organization that is characterized by globular grains of a few microns. The coupling of Raman spectroscopy, X‐ray photoelectron spectroscopy, and X‐ray diffraction analyses confirms the good quality of diamond phase and convincingly points out the inclusion of the titanium species within the diamond lattice.