Direct tape casting of Al2O3/AlN slurry for AlON transparent ceramic wafers via one-step reaction sintering

In this work, transparent aluminate oxynitride (AlON) ceramic wafers were successfully fabricated by the direct non-aqueous tape casting of Al2O3/AlN slurry and the one-step reaction sintering for the first time. The reaction sintered AlON ceramic wafer exhibits high transmittance of 73.2 % at the wavelength of 1600 nm. This fabricating route realizes smooth and flexible tape without cracks or pinholes in Al2O3/AlN system and efficiently shortens the preparation cycle of transparent AlON wafers, which is a feasible way to prepare high-quality transparent AlON ceramics with large lateral sizes and thin thicknesses by reaction sintering, might also promote the application of transparent AlON ceramic wafers.