赤铁矿
光电流
掺杂剂
材料科学
分解水
兴奋剂
载流子
电化学
表面电荷
表面状态
化学工程
化学物理
光电子学
纳米技术
表面电导率
光电化学
耗尽区
电导率
阳极
电荷密度
催化作用
电荷(物理)
异质结
作者
Yi-Ping Zhao,Jia-He Ru,Hong Liu,Peng He,Guang-Ping Yi,Xiu-Mei Mi,Jordi Arbiol,Pengyi Tang
标识
DOI:10.1021/acscatal.6c04812
摘要
Abstract Hematite (α-Fe2O3) photoanodes are limited by poor bulk conductivity and severe surface recombination, which hinder their photoelectrochemical (PEC) water-splitting activity. We demonstrate that a simple, rapid microwave-sintering (RMS) route simultaneously incorporates Ti into the bulk and establishes a Ge surface gradient in RMS@GeTi:Fe2O3 electrodes. This dual doping approach delivers a record photocurrent of 5.31 mA cm–2 at 1.23 V vs RHE under standard AM 1.5 G illumination, which is 11.3 times higher than pristine hematite (0.47 mA cm–2) and the highest value reported to date for bare α-Fe2O3 without co-catalysts. Systematic spectroscopic and electrochemical analyses disentangle the individual and synergistic roles of the dopants: Ti incorporation significantly enhances bulk carrier density, reduces the bulk resistance, and accelerates the transport of photogenerated carriers within the hematite lattice. Concurrently, it regulates the distribution of surface states, facilitating interfacial charge transfer. Meanwhile, the graded Ge dopant profile localized near the surface cooperatively modulates the hematite surface states and suppresses surface charge recombination. The combined Ge-Ti dual-doping strategy thus optimizes both bulk transport and surface water-oxidation kinetics, providing a scalable pathway toward high-performance hematite photoanodes without external catalysts or overlayers.
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