Ferroelectric nanodomains in epitaxial GeTe thin films

In this paper the authors have grown germanium telluride thin films by molecular beam epitaxy on silicon as a proposed system for ferroelectric-based spintronics with high spin-orbit coupling. The structure of ferroelectric domains is explored in a wide range of film thickness. After elucidating the domain wall type and domain volume fraction, the stability of ferroelectric domains with respect to thermomechanical stress is discussed.