Diode-based characterization methods

Cointegrated with MOSFETs, the gated diodes bring added value for the characterization of the very same FD-SOI process. A gated PIN diode is a versatile device in the sense that the anode (P+) and cathode (N+) terminals act as immense reservoirs of holes and electrons. Whatever the gates demand, the terminals are happy to deliver. The carriers can be rapidly added to or removed from the body, which means that a diode is “always” in steady-state condition. The presence of electron and hole tanks is a distinct advantage of FD-SOI gated diodes. The diode behaves in many respects as a body-contacted 5-terminal MOSFET. But, in ultrathin FD-SOI, the body contact features very high resistance that opposes its effectiveness. This chapter describes selected characterization techniques based on diode operation.