二硒化钨
激子
Valleytronics公司
光致发光
激发
电介质
物理
单层
数码产品
消灭
光电子学
凝聚态物理
过渡金属
材料科学
纳米技术
化学
量子力学
铁磁性
催化作用
自旋电子学
生物化学
物理化学
作者
Sebastian Klimmer,Giancarlo Soavi,Isabelle Staude,Ángela Barreda
出处
期刊:Nanomaterials
[MDPI AG]
日期:2023-11-27
卷期号:13 (23): 3028-3028
被引量:4
摘要
Thanks to their long lifetime, spin-forbidden dark excitons in transition metal dichalcogenides are promising candidates for storage applications in opto-electronics and valleytronics. To date, their study has been hindered by inefficient generation mechanisms and the necessity for elaborate detection schemes. In this work, we propose a new hybrid platform that simultaneously addresses both challenges. We study an all-dielectric metasurface with two symmetrically protected quasi-bound states in the continuum to enhance both the excitation and emission of dark excitons in a tungsten diselenide monolayer under normal light incidence. Our simulations show a giant photoluminescence signal enhancement (∼520) along with directional emission, thus offering distinct advantages for opto-electronic and valleytronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI