Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

In this study, we proposed a novel multi-bit content addressable memory (MCAM) cell based on one single double-gated ferroelectric-gate FET (DG-FeFET). Baseline DG-FeFET has been modeled, and the parameters are calibrated with experimental results by technology computer aided design (TCAD). Thanks to the pairing opposite ferroelectric states of the top/bottom gate (TG/BG) and pairing opposite searching voltages applied to TG and BG, MCAM functions with one DG-FeFET can be realized. The corresponding writing and searching operations are investigated in detail by the TCAD Sentaurus model. In addition, it is clarified that reducing the coupling effect of top and bottom channel by appropriately increasing the body thickness (Tbody) can boost the mismatch/match ratio. The proposed MCAM cell with one single DG-FeFET is promising for ultra-high-density computing systems.