发光二极管
光电子学
材料科学
硅
基质(水族馆)
氮化镓
宽禁带半导体
纳米技术
海洋学
地质学
图层(电子)
作者
Sultan El Badaoui,Luc Maret,Nicolas Delaunay,Anthony Cibié,Patrick Le Maître,Clement Ballot,Julia Simon,Bastien Miralles,Bernard Aventurier,Paolo De Martino,S. Jacob,Yannis Le Guennec
标识
DOI:10.1109/lpt.2024.3451244
摘要
In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes ($\mu $LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for$\mu $LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of$3.8\times 10 ^{-3}$is reported using a single$50 \times 50~\mu $m2 blue$\mu $LED. This data rate was further improved to reach 15.5 Gb/s in the case where the$\mu $LED is only limited by its non-linear distortions instead of the system’s noise, highlighting the high linearity of GaN$\mu $LEDs.
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