Gallium Nitride (GaN) Device - Study and Application in Power Electronics

Wide band-gap (WBG) semiconductors offer a great advantage by providing better switching and lower losses, making them ideal for higher power density and higher efficiency applications. Better switching levels are provided by some common wide bandgap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) compared to other FETs. The GaN power device's output performance is characterized by its transfer characteristics, output characteristics, switching characteristics, and efficiency. In this study, we used a GaN MOSFET as a switch in a boost converter operating at a high switching frequency. The paper's goal is to examine the characteristics of GAN063-650WSA from Nexperia and its application as a switch in power converters.