伤害感受器
计算机科学
记忆电阻器
神经科学
伤害
电气工程
化学
工程类
受体
心理学
生物化学
作者
Durjoy Dev,Mashiyat Sumaiya Shawkat,Adithi Krishnaprasad,Yeonwoong Jung,Tania Roy
标识
DOI:10.1109/led.2020.3012831
摘要
An artificial nociceptor realized with a single 2D MoS 2 -based memristor device is demonstrated in this work. The threshold switching memristor (TSM) device exhibits volatile resistance switching characteristics with low threshold voltage and a high ON-OFF ratio of 10 6 . The Au/MoS 2 /Ag TSM device imitates a nociceptor, a special receptor of a sensory neuron that can detect noxious stimulus and transfer the signal to the central nervous system for preventive actions. The single device exhibits all key features of nociceptors including threshold, relaxation, "no adaptation" and sensitization phenomena of allodynia and hyperalgesia depending on the strength, duration, and repetition of the external stimuli. This work indicates applicability of this device in artificial sensory alarm systems for humanoid robots.
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