The Effect of Deposition Temperature on the Growth of ZnO Nanorods on Porous Silicon using Sol-gel Immersion Method

Zinc Oxide (ZnO) nanorods were grown on porous silicon substrate by sol‐gel immersion method, which is containing of zinc nitrate hexahydrate (Zn(NO3)2⋅6H2O) and hexamethylenetetramine (C6H12N4).ZnO Nanorods prepared under the different deposition temperature. The surface morphology and photoluminescence spectrum of the samples were characterized using scanning electron microscope (SEM), and photoluminescence spectroscope (PL). The result indicated that the ZnO nanorods start to form at 85° C. From the photoluminescence spectrum, it shows that a strong ultra‐violet (UV) emission peak and several weak emission peaks related to the deep level excitation de‐excitation were detected.