光探测
材料科学
钙钛矿(结构)
光电子学
平面的
光电探测器
电子迁移率
基质(水族馆)
半导体
薄膜
纳米技术
计算机科学
结晶学
化学
地质学
计算机图形学(图像)
海洋学
作者
Makhsud I. Saidaminov,Valerio Adinolfi,Riccardo Comin,Ahmed L. Abdelhady,Wei Peng,İbrahim Dursun,Mingjian Yuan,Sjoerd Hoogland,Edward H. Sargent,Osman M. Bakr
摘要
Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 10(4) electrons per photon) and high gain-bandwidth product (above 10(8) Hz) relative to other perovskite-based optical sensors.
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