CMOS芯片
晶体管
电压
电压基准
电气工程
电子工程
计算机科学
材料科学
工程类
作者
Minji Jung,K. Min,Hyunwoo Son,Youngwoo Ji
出处
期刊:Electronics
[MDPI AG]
日期:2025-02-01
卷期号:14 (3): 588-588
被引量:2
标识
DOI:10.3390/electronics14030588
摘要
This paper presents an ultra-low-power CMOS voltage reference designed and verified in an 180 nm standard CMOS technology. To achieve DC and AC supply sensitivity under 0.01%/V and −100 dB, it employs a single transistor and two 2-T cores to improve supply immunity with minimal overhead, adding only one drain-to-source voltage for the total supply voltage. The proposed design achieves a line sensitivity of 0.0027%/V in a supply voltage range of 0.5 V to 2 V and consumes 630 pW with a supply voltage of 0.5 V. The simulated temperature coefficient is 12 ppm/°C in a temperature range of −40 °C to 150 °C, and the simulated power supply rejection ratio is −100.5 dB at 100 Hz without requiring any output decoupling capacitor.
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