谐振器
电阻抗
共振(粒子物理)
虚假关系
物理
Q系数
声学
帧(网络)
电子工程
光电子学
计算机科学
工程类
原子物理学
电信
量子力学
机器学习
作者
Jiashuai Wang,Xuan Zhang,Tao Yang
标识
DOI:10.1109/ims37964.2023.10188134
摘要
An extended Mason model for FBAR resonators was introduced to model parasitic modes below the resonance frequency and sub-resonances arising from the frame structure. The predictions of the model are compared with on-wafer measurements of film bulk acoustic resonator (FBAR) resonators with different impedance. Simulated and Measurement results show that the abrupt change of the Q-factor near the resonance frequency f s can be well modeled, and the proposed model accurately represents the parasitic modes and sub-resonances of resonators with different frequencies and impedances.
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